Infineon Technologies SPD08N50C3 is a SPD08N50C3 from Infineon Technologies, part of the MOSFETs. It is designed for 500V 7.6A 600mΩ@4.6A,10V 83W 3.9V@350uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 7.6A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 600mΩ@4.6A,10V
- Power Dissipation (Pd): 83W
- Gate Threshold Voltage (Vgs(th)@Id): 3.9V@350uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 750pF@25V
- Total Gate Charge (Qg@Vgs): 32nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on SPD08N50C3
Full Specifications of SPD08N50C3
Model Number | SPD08N50C3 |
Model Name | Infineon Technologies SPD08N50C3 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 500V 7.6A 600mΩ@4.6A,10V 83W 3.9V@350uA 1PCSNChannel TO-252 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-252 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 500V |
Continuous Drain Current (Id) | 7.6A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 600mΩ@4.6A,10V |
Power Dissipation (Pd) | 83W |
Gate Threshold Voltage (Vgs(th)@Id) | 3.9V@350uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 750pF@25V |
Total Gate Charge (Qg@Vgs) | 32nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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