Infineon Technologies SPD09P06PLGBTMA1 is a SPD09P06PLGBTMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 9.7A 250mΩ@6.8A,10V 42W 2V@250uA 1PCSPChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 9.7A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 250mΩ@6.8A,10V
- Power Dissipation (Pd): 42W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 450pF@25V
- Total Gate Charge (Qg@Vgs): 21nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.39 grams.
More on SPD09P06PLGBTMA1
Full Specifications of SPD09P06PLGBTMA1
Model Number | SPD09P06PLGBTMA1 |
Model Name | Infineon Technologies SPD09P06PLGBTMA1 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 60V 9.7A 250mΩ@6.8A,10V 42W 2V@250uA 1PCSPChannel TO-252-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.390 grams / 0.013757 oz |
Package / Case | TO-252-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 9.7A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 250mΩ@6.8A,10V |
Power Dissipation (Pd) | 42W |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 450pF@25V |
Total Gate Charge (Qg@Vgs) | 21nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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