SPD18P06PG by Infineon Technologies – Specifications

Infineon Technologies SPD18P06PG is a SPD18P06PG from Infineon Technologies, part of the MOSFETs. It is designed for 60V 18.6A 130mΩ@13.2A,10V 80W 4V@1mA 1PCSPChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 18.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 130mΩ@13.2A,10V
  • Power Dissipation (Pd): 80W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@1mA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 860pF@25V
  • Total Gate Charge (Qg@Vgs): 33nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SPD18P06PG

Model NumberSPD18P06PG
Model NameInfineon Technologies SPD18P06PG
CategoryMOSFETs
BrandInfineon Technologies
Description60V 18.6A 130mΩ@13.2A,10V 80W 4V@1mA 1PCSPChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)18.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)130mΩ@13.2A,10V
Power Dissipation (Pd)80W
Gate Threshold Voltage (Vgs(th)@Id)4V@1mA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)860pF@25V
Total Gate Charge (Qg@Vgs)33nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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