Infineon Technologies SPD18P06PGBTMA1 is a SPD18P06PGBTMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 18.6A 130mΩ@13.2A,10V 80W 4V@1mA 1PCSPChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 18.6A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 130mΩ@13.2A,10V
- Power Dissipation (Pd): 80W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@1mA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 860pF@25V
- Total Gate Charge (Qg@Vgs): 33nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.75 grams.
More on SPD18P06PGBTMA1
Full Specifications of SPD18P06PGBTMA1
Model Number | SPD18P06PGBTMA1 |
Model Name | Infineon Technologies SPD18P06PGBTMA1 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 60V 18.6A 130mΩ@13.2A,10V 80W 4V@1mA 1PCSPChannel TO-252-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.750 grams / 0.026456 oz |
Package / Case | TO-252-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 18.6A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 130mΩ@13.2A,10V |
Power Dissipation (Pd) | 80W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@1mA |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 860pF@25V |
Total Gate Charge (Qg@Vgs) | 33nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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