SPD30N03S2L-07 G by Infineon Technologies – Specifications

Infineon Technologies SPD30N03S2L-07 G is a SPD30N03S2L-07 G from Infineon Technologies, part of the MOSFETs. It is designed for 30V 30A 6.7mΩ@30A,10V 136W 2V@85uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.7mΩ@30A,10V
  • Power Dissipation (Pd): 136W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@85uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.53nF@25V
  • Total Gate Charge (Qg@Vgs): 68nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SPD30N03S2L-07 G

Model NumberSPD30N03S2L-07 G
Model NameInfineon Technologies SPD30N03S2L-07 G
CategoryMOSFETs
BrandInfineon Technologies
Description30V 30A 6.7mΩ@30A,10V 136W 2V@85uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)6.7mΩ@30A,10V
Power Dissipation (Pd)136W
Gate Threshold Voltage (Vgs(th)@Id)2V@85uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.53nF@25V
Total Gate Charge (Qg@Vgs)68nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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