SPD30P06PGBTMA1 by Infineon Technologies – Specifications

Infineon Technologies SPD30P06PGBTMA1 is a SPD30P06PGBTMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 30A 75mΩ@21.5A,10V 125W [email protected] 1PCSPChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 75mΩ@21.5A,10V
  • Power Dissipation (Pd): 125W
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.535nF@25V
  • Total Gate Charge (Qg@Vgs): 48nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.37 grams.

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Full Specifications of SPD30P06PGBTMA1

Model NumberSPD30P06PGBTMA1
Model NameInfineon Technologies SPD30P06PGBTMA1
CategoryMOSFETs
BrandInfineon Technologies
Description60V 30A 75mΩ@21.5A,10V 125W [email protected] 1PCSPChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.370 grams / 0.013051 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)75mΩ@21.5A,10V
Power Dissipation (Pd)125W
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.535nF@25V
Total Gate Charge (Qg@Vgs)48nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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