Infineon Technologies SPD50N03S2-07G is a SPD50N03S2-07G from Infineon Technologies, part of the MOSFETs. It is designed for 30V 50A 136W 7.3mΩ@50A,10V 4V@85uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 50A
- Power Dissipation (Pd): 136W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.3mΩ@50A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@85uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.17nF@25V
- Total Gate Charge (Qg@Vgs): 46.5nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on SPD50N03S2-07G
Full Specifications of SPD50N03S2-07G
Model Number | SPD50N03S2-07G |
Model Name | Infineon Technologies SPD50N03S2-07G |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 30V 50A 136W 7.3mΩ@50A,10V 4V@85uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-252-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 50A |
Power Dissipation (Pd) | 136W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 7.3mΩ@50A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@85uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.17nF@25V |
Total Gate Charge (Qg@Vgs) | 46.5nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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