SPD50N03S2-07G by Infineon Technologies – Specifications

Infineon Technologies SPD50N03S2-07G is a SPD50N03S2-07G from Infineon Technologies, part of the MOSFETs. It is designed for 30V 50A 136W 7.3mΩ@50A,10V 4V@85uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 50A
  • Power Dissipation (Pd): 136W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.3mΩ@50A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@85uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.17nF@25V
  • Total Gate Charge (Qg@Vgs): 46.5nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SPD50N03S2-07G

Model NumberSPD50N03S2-07G
Model NameInfineon Technologies SPD50N03S2-07G
CategoryMOSFETs
BrandInfineon Technologies
Description30V 50A 136W 7.3mΩ@50A,10V 4V@85uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)50A
Power Dissipation (Pd)136W
Drain Source On Resistance (RDS(on)@Vgs,Id)7.3mΩ@50A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@85uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.17nF@25V
Total Gate Charge (Qg@Vgs)46.5nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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