Infineon Technologies SPD50P03L G is a SPD50P03L G from Infineon Technologies, part of the MOSFETs. It is designed for 30V 50A 8.5mΩ@4.5V,30A 150W 1.5V@250uA 1PCSPChannel TO-252-4 MOSFETs ROHS. This product comes in a TO-252-4 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 50A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8.5mΩ@4.5V,30A
- Power Dissipation (Pd): 150W
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 1nF@25V
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 4.59nF@25V
- Total Gate Charge (Qg@Vgs): 95nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on SPD50P03L G
Full Specifications of SPD50P03L G
Model Number | SPD50P03L G |
Model Name | Infineon Technologies SPD50P03L G |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 30V 50A 8.5mΩ@4.5V,30A 150W 1.5V@250uA 1PCSPChannel TO-252-4 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-252-4 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 50A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 8.5mΩ@4.5V,30A |
Power Dissipation (Pd) | 150W |
Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 1nF@25V |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 4.59nF@25V |
Total Gate Charge (Qg@Vgs) | 95nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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