SPI08N50C3 by Infineon Technologies – Specifications

Infineon Technologies SPI08N50C3 is a SPI08N50C3 from Infineon Technologies, part of the MOSFETs. It is designed for 560V 7.6A 83W 600mΩ@4.6A,10V 3.9V@350uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS. This product comes in a TO-262-3-1 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 560V
  • Continuous Drain Current (Id): 7.6A
  • Power Dissipation (Pd): 83W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 600mΩ@4.6A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@350uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 750pF@25V
  • Total Gate Charge (Qg@Vgs): 32nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SPI08N50C3

Model NumberSPI08N50C3
Model NameInfineon Technologies SPI08N50C3
CategoryMOSFETs
BrandInfineon Technologies
Description560V 7.6A 83W 600mΩ@4.6A,10V 3.9V@350uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3-1
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)560V
Continuous Drain Current (Id)7.6A
Power Dissipation (Pd)83W
Drain Source On Resistance (RDS(on)@Vgs,Id)600mΩ@4.6A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.9V@350uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)750pF@25V
Total Gate Charge (Qg@Vgs)32nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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