SPI08N50C3IN by Infineon Technologies – Specifications

Infineon Technologies SPI08N50C3IN is a SPI08N50C3IN from Infineon Technologies, part of the MOSFETs. It is designed for 500V 7.6A 83W 600mΩ@4.6A,10V 3.9V@350uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Bag-packed. Key features include:

• Drain Source Voltage (Vdss): 500V
• Continuous Drain Current (Id): 7.6A
• Power Dissipation (Pd): 83W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 600mΩ@4.6A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 3.9V@350uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 750pF@25V
• Total Gate Charge (Qg@Vgs): 32nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.