SPI11N60S5 by Infineon Technologies – Specifications

Infineon Technologies SPI11N60S5 is a SPI11N60S5 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 11A 125W 380mΩ@7A,10V 5.5V@500uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Bag-packed. Key features include:

• Drain Source Voltage (Vdss): 600V
• Continuous Drain Current (Id): 11A
• Power Dissipation (Pd): 125W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 380mΩ@7A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 5.5V@500uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.46nF@25V
• Total Gate Charge (Qg@Vgs): 54nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.