SPI15N65C3 by Infineon Technologies – Specifications

Infineon Technologies SPI15N65C3 is a SPI15N65C3 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 15A 280mΩ@9.4A,10V 156W 3.9V@675uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS. This product comes in a TO-262-3-1 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 15A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 280mΩ@9.4A,10V
  • Power Dissipation (Pd): 156W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@675uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.6nF@25V
  • Total Gate Charge (Qg@Vgs): 63nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SPI15N65C3

Model NumberSPI15N65C3
Model NameInfineon Technologies SPI15N65C3
CategoryMOSFETs
BrandInfineon Technologies
Description650V 15A 280mΩ@9.4A,10V 156W 3.9V@675uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3-1
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)15A
Drain Source On Resistance (RDS(on)@Vgs,Id)280mΩ@9.4A,10V
Power Dissipation (Pd)156W
Gate Threshold Voltage (Vgs(th)@Id)3.9V@675uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.6nF@25V
Total Gate Charge (Qg@Vgs)63nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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