SPI20N60CFD by Infineon Technologies – Specifications

Infineon Technologies SPI20N60CFD is a SPI20N60CFD from Infineon Technologies, part of the MOSFETs. It is designed for 600V 20.7A 208W 220mΩ@13.1A,10V 5V@1mA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 20.7A
  • Power Dissipation (Pd): 208W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 220mΩ@13.1A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@1mA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.4nF@25V
  • Total Gate Charge (Qg@Vgs): 124nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SPI20N60CFD

Model NumberSPI20N60CFD
Model NameInfineon Technologies SPI20N60CFD
CategoryMOSFETs
BrandInfineon Technologies
Description600V 20.7A 208W 220mΩ@13.1A,10V 5V@1mA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)20.7A
Power Dissipation (Pd)208W
Drain Source On Resistance (RDS(on)@Vgs,Id)220mΩ@13.1A,10V
Gate Threshold Voltage (Vgs(th)@Id)5V@1mA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.4nF@25V
Total Gate Charge (Qg@Vgs)124nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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