SPP04N60C2 by Infineon Technologies – Specifications

Infineon Technologies SPP04N60C2 is a SPP04N60C2 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 4.5A 950mΩ@2.8A,10V 50W 5.5V@200uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 4.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 950mΩ@2.8A,10V
  • Power Dissipation (Pd): 50W
  • Gate Threshold Voltage (Vgs(th)@Id): 5.5V@200uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 580pF@25V
  • Total Gate Charge (Qg@Vgs): 22.9nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SPP04N60C2

Model NumberSPP04N60C2
Model NameInfineon Technologies SPP04N60C2
CategoryMOSFETs
BrandInfineon Technologies
Description600V 4.5A 950mΩ@2.8A,10V 50W 5.5V@200uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)4.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)950mΩ@2.8A,10V
Power Dissipation (Pd)50W
Gate Threshold Voltage (Vgs(th)@Id)5.5V@200uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)580pF@25V
Total Gate Charge (Qg@Vgs)22.9nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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