SPP08N50C3 by Infineon Technologies – Specifications

Infineon Technologies SPP08N50C3 is a SPP08N50C3 from Infineon Technologies, part of the MOSFETs. It is designed for 560V 7.6A 83W 600mΩ@10V,4.6A 3.9V@350uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 560V
  • Continuous Drain Current (Id): 7.6A
  • Power Dissipation (Pd): 83W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 600mΩ@10V,4.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@350uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.992 grams.

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Full Specifications of SPP08N50C3

Model NumberSPP08N50C3
Model NameInfineon Technologies SPP08N50C3
CategoryMOSFETs
BrandInfineon Technologies
Description560V 7.6A 83W 600mΩ@10V,4.6A 3.9V@350uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.992 grams / 0.10554 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)560V
Continuous Drain Current (Id)7.6A
Power Dissipation (Pd)83W
Drain Source On Resistance (RDS(on)@Vgs,Id)600mΩ@10V,4.6A
Gate Threshold Voltage (Vgs(th)@Id)3.9V@350uA
Type1PCSNChannel

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