SPP08N80C3 by Infineon Technologies – Specifications

Infineon Technologies SPP08N80C3 is a SPP08N80C3 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 8A 104W 650mΩ@10V,5.1A 3.9V@470uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 8A
  • Power Dissipation (Pd): 104W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 650mΩ@10V,5.1A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@470uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.86 grams.

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Full Specifications of SPP08N80C3

Model NumberSPP08N80C3
Model NameInfineon Technologies SPP08N80C3
CategoryMOSFETs
BrandInfineon Technologies
Description800V 8A 104W 650mΩ@10V,5.1A 3.9V@470uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.860 grams / 0.100884 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)8A
Power Dissipation (Pd)104W
Drain Source On Resistance (RDS(on)@Vgs,Id)650mΩ@10V,5.1A
Gate Threshold Voltage (Vgs(th)@Id)3.9V@470uA
Type1PCSNChannel

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