SPP11N60C3 by Infineon Technologies – Specifications

Infineon Technologies SPP11N60C3 is a SPP11N60C3 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 11A 380mΩ@10V,7A 125W 3.9V@500uA N Channel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 11A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 380mΩ@10V,7A
  • Power Dissipation (Pd): 125W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@500uA
  • Type: N Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.64 grams.

More on SPP11N60C3

Full Specifications of SPP11N60C3

Model NumberSPP11N60C3
Model NameInfineon Technologies SPP11N60C3
CategoryMOSFETs
BrandInfineon Technologies
Description650V 11A 380mΩ@10V,7A 125W 3.9V@500uA N Channel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.640 grams / 0.093123 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)11A
Drain Source On Resistance (RDS(on)@Vgs,Id)380mΩ@10V,7A
Power Dissipation (Pd)125W
Gate Threshold Voltage (Vgs(th)@Id)3.9V@500uA
TypeN Channel

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