SPP11N65C3XK by Infineon Technologies – Specifications

Infineon Technologies SPP11N65C3XK is a SPP11N65C3XK from Infineon Technologies, part of the MOSFETs. It is designed for 650V 11A 125W 380mΩ@7A,10V 3.9V@500uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 11A
  • Power Dissipation (Pd): 125W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 380mΩ@7A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@500uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.2nF@25V
  • Total Gate Charge (Qg@Vgs): 60nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SPP11N65C3XK

Model NumberSPP11N65C3XK
Model NameInfineon Technologies SPP11N65C3XK
CategoryMOSFETs
BrandInfineon Technologies
Description650V 11A 125W 380mΩ@7A,10V 3.9V@500uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)11A
Power Dissipation (Pd)125W
Drain Source On Resistance (RDS(on)@Vgs,Id)380mΩ@7A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.9V@500uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.2nF@25V
Total Gate Charge (Qg@Vgs)60nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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