SPP11N80C3 by Infineon Technologies – Specifications

Infineon Technologies SPP11N80C3 is a SPP11N80C3 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 11A 156W 450mΩ@10V,7.1A 3.9V@680uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 11A
  • Power Dissipation (Pd): 156W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 450mΩ@10V,7.1A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@680uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.912 grams.

More on SPP11N80C3

Full Specifications of SPP11N80C3

Model NumberSPP11N80C3
Model NameInfineon Technologies SPP11N80C3
CategoryMOSFETs
BrandInfineon Technologies
Description800V 11A 156W 450mΩ@10V,7.1A 3.9V@680uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.912 grams / 0.102718 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)11A
Power Dissipation (Pd)156W
Drain Source On Resistance (RDS(on)@Vgs,Id)450mΩ@10V,7.1A
Gate Threshold Voltage (Vgs(th)@Id)3.9V@680uA
Type1PCSNChannel

Compare Infineon Technologies - SPP11N80C3 With Other 200 Models

Related Models - SPP11N80C3 Alternative

Scroll to Top