Infineon Technologies SPP15N60C3 is a SPP15N60C3 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 15A 250mΩ@10V,9.4A 156W 3.9V@675uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 15A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 250mΩ@10V,9.4A
- Power Dissipation (Pd): 156W
- Gate Threshold Voltage (Vgs(th)@Id): 3.9V@675uA
- Reverse Transfer Capacitance (Crss@Vds): 40pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.66nF@25V
- Total Gate Charge (Qg@Vgs): 63nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.92 grams.
More on SPP15N60C3
Full Specifications of SPP15N60C3
Model Number | SPP15N60C3 |
Model Name | Infineon Technologies SPP15N60C3 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 650V 15A 250mΩ@10V,9.4A 156W 3.9V@675uA 1PCSNChannel TO-220 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 2.920 grams / 0.103 oz |
Package / Case | TO-220 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 650V |
Continuous Drain Current (Id) | 15A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 250mΩ@10V,9.4A |
Power Dissipation (Pd) | 156W |
Gate Threshold Voltage (Vgs(th)@Id) | 3.9V@675uA |
Reverse Transfer Capacitance (Crss@Vds) | 40pF@25V |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.66nF@25V |
Total Gate Charge (Qg@Vgs) | 63nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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