SPP15P10P H by Infineon Technologies – Specifications

Infineon Technologies SPP15P10P H is a SPP15P10P H from Infineon Technologies, part of the MOSFETs. It is designed for 100V 15A 240mΩ@10.6A,10V 128W [email protected] 1PCSPChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 15A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 240mΩ@10.6A,10V
  • Power Dissipation (Pd): 128W
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.28nF@25V
  • Total Gate Charge (Qg@Vgs): 48nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SPP15P10P H

Model NumberSPP15P10P H
Model NameInfineon Technologies SPP15P10P H
CategoryMOSFETs
BrandInfineon Technologies
Description100V 15A 240mΩ@10.6A,10V 128W [email protected] 1PCSPChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)15A
Drain Source On Resistance (RDS(on)@Vgs,Id)240mΩ@10.6A,10V
Power Dissipation (Pd)128W
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.28nF@25V
Total Gate Charge (Qg@Vgs)48nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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