SPP16N50C3 by Infineon Technologies – Specifications

Infineon Technologies SPP16N50C3 is a SPP16N50C3 from Infineon Technologies, part of the MOSFETs. It is designed for 500V 16A 160W 280mΩ@10A,10V 3.9V@675uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 16A
  • Power Dissipation (Pd): 160W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 280mΩ@10A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@675uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.6nF@25V
  • Total Gate Charge (Qg@Vgs): 66nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SPP16N50C3

Model NumberSPP16N50C3
Model NameInfineon Technologies SPP16N50C3
CategoryMOSFETs
BrandInfineon Technologies
Description500V 16A 160W 280mΩ@10A,10V 3.9V@675uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)16A
Power Dissipation (Pd)160W
Drain Source On Resistance (RDS(on)@Vgs,Id)280mΩ@10A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.9V@675uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.6nF@25V
Total Gate Charge (Qg@Vgs)66nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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