Infineon Technologies SPP73N03S2L-08 is a SPP73N03S2L-08 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 73A 8.4mΩ@36A,10V 107W 2V@55uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 73A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8.4mΩ@36A,10V
- Power Dissipation (Pd): 107W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@55uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.71nF@25V
- Total Gate Charge (Qg@Vgs): 46.2nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on SPP73N03S2L-08
Full Specifications of SPP73N03S2L-08
Model Number | SPP73N03S2L-08 |
Model Name | Infineon Technologies SPP73N03S2L-08 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 30V 73A 8.4mΩ@36A,10V 107W 2V@55uA 1PCSNChannel TO-220 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-220 |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 73A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 8.4mΩ@36A,10V |
Power Dissipation (Pd) | 107W |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@55uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.71nF@25V |
Total Gate Charge (Qg@Vgs) | 46.2nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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