SPP80N03S2L-05 by Infineon Technologies – Specifications

Infineon Technologies SPP80N03S2L-05 is a SPP80N03S2L-05 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 80A 4mΩ@10V,55A 167W 1.6V@110uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@10V,55A
  • Power Dissipation (Pd): 167W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V@110uA
  • Reverse Transfer Capacitance (Crss@Vds): 215pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.5nF@25V
  • Total Gate Charge (Qg@Vgs): 67.5nC@0~10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SPP80N03S2L-05

Model NumberSPP80N03S2L-05
Model NameInfineon Technologies SPP80N03S2L-05
CategoryMOSFETs
BrandInfineon Technologies
Description30V 80A 4mΩ@10V,55A 167W 1.6V@110uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)4mΩ@10V,55A
Power Dissipation (Pd)167W
Gate Threshold Voltage (Vgs(th)@Id)1.6V@110uA
Reverse Transfer Capacitance (Crss@Vds)215pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.5nF@25V
Total Gate Charge (Qg@Vgs)67.5nC@0~10V
Operating Temperature-55℃~+175℃@(Tj)

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