SPP80N06S-08 by Infineon Technologies – Specifications

Infineon Technologies SPP80N06S-08 is a SPP80N06S-08 from Infineon Technologies, part of the MOSFETs. It is designed for 55V 80A 8mΩ@80A,10V 300W 4V@240uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@80A,10V
  • Power Dissipation (Pd): 300W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@240uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.66nF@25V
  • Total Gate Charge (Qg@Vgs): 187nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SPP80N06S-08

Full Specifications of SPP80N06S-08

Model NumberSPP80N06S-08
Model NameInfineon Technologies SPP80N06S-08
CategoryMOSFETs
BrandInfineon Technologies
Description55V 80A 8mΩ@80A,10V 300W 4V@240uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@80A,10V
Power Dissipation (Pd)300W
Gate Threshold Voltage (Vgs(th)@Id)4V@240uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.66nF@25V
Total Gate Charge (Qg@Vgs)187nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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