SPPO4N80C3 by Infineon Technologies – Specifications

Infineon Technologies SPPO4N80C3 is a SPPO4N80C3 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 4A 63W 1.3Ω@2.5A,10V 3.9V@240uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 4A
  • Power Dissipation (Pd): 63W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.3Ω@2.5A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@240uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 570pF@100V
  • Total Gate Charge (Qg@Vgs): 31nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SPPO4N80C3

Full Specifications of SPPO4N80C3

Model NumberSPPO4N80C3
Model NameInfineon Technologies SPPO4N80C3
CategoryMOSFETs
BrandInfineon Technologies
Description800V 4A 63W 1.3Ω@2.5A,10V 3.9V@240uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)4A
Power Dissipation (Pd)63W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.3Ω@2.5A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.9V@240uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)570pF@100V
Total Gate Charge (Qg@Vgs)31nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - SPPO4N80C3 With Other 200 Models

Related Models - SPPO4N80C3 Alternative

Scroll to Top