SPW35N60C3FKSA1 by Infineon Technologies – Specifications

Infineon Technologies SPW35N60C3FKSA1 is a SPW35N60C3FKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 34.6A 100mΩ@21.9A,10V 313W [email protected] 1PCSNChannel TO-247-3-1 MOSFETs ROHS. This product comes in a TO-247-3-1 package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 650V
• Continuous Drain Current (Id): 34.6A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 100mΩ@21.9A,10V
• Power Dissipation (Pd): 313W
• Gate Threshold Voltage (Vgs(th)@Id): [email protected]
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 4.5nF@25V
• Total Gate Charge (Qg@Vgs): 200nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.