2N5551-TA(RANGE:200-300) by Jiangsu Changjing Electronics Technology Co., Ltd. – Specifications

Jiangsu Changjing Electronics Technology Co., Ltd. 2N5551-TA(RANGE:200-300) is a 2N5551-TA(RANGE:200-300) from Jiangsu Changjing Electronics Technology Co., Ltd., part of the Bipolar Transistors - BJT. It is designed for 160V 625mW 200@10mA,5V 600mA NPN TO-92-3 Bipolar Transistors - BJT ROHS. This product comes in a TO-92-3 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 50nA
  • Collector-Emitter Breakdown Voltage (Vceo): 160V
  • Power Dissipation (Pd): 625mW
  • DC Current Gain (hFE@Ic,Vce): 200@10mA,5V
  • Collector Current (Ic): 600mA
  • Transition Frequency (fT): 100MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,5mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.276 grams.

Full Specifications of 2N5551-TA(RANGE:200-300)

Model Number2N5551-TA(RANGE:200-300)
Model NameJiangsu Changjing Electronics Technology Co., Ltd. 2N5551-TA(RANGE:200-300)
CategoryBipolar Transistors - BJT
BrandJiangsu Changjing Electronics Technology Co., Ltd.
Description160V 625mW 200@10mA,5V 600mA NPN TO-92-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.276 grams / 0.009736 oz
Package / CaseTO-92-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)50nA
Collector-Emitter Breakdown Voltage (Vceo)160V
Power Dissipation (Pd)625mW
DC Current Gain (hFE@Ic,Vce)200@10mA,5V
Collector Current (Ic)600mA
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)200mV@50mA,5mA
Transistor TypeNPN
Operating Temperature-

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