JCS640RH-O-R-N-A by Jilin Sino-Microelectronics – Specifications

Jilin Sino-Microelectronics JCS640RH-O-R-N-A is a JCS640RH-O-R-N-A from Jilin Sino-Microelectronics, part of the MOSFETs. It is designed for 200V 18A 150mΩ@10V,9A 140W 4V@250uA 1PCSNChannel TO-252-2(DPAK) MOSFETs ROHS. This product comes in a TO-252-2(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 18A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@10V,9A
  • Power Dissipation (Pd): 140W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.456 grams.

More on JCS640RH-O-R-N-A

Full Specifications of JCS640RH-O-R-N-A

Model NumberJCS640RH-O-R-N-A
Model NameJilin Sino-Microelectronics JCS640RH-O-R-N-A
CategoryMOSFETs
BrandJilin Sino-Microelectronics
Description200V 18A 150mΩ@10V,9A 140W 4V@250uA 1PCSNChannel TO-252-2(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.456 grams / 0.016085 oz
Package / CaseTO-252-2(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)18A
Drain Source On Resistance (RDS(on)@Vgs,Id)150mΩ@10V,9A
Power Dissipation (Pd)140W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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