2N3906S-RTK/P by KEC Semicon – Specifications

KEC Semicon 2N3906S-RTK/P is a 2N3906S-RTK/P from KEC Semicon, part of the Bipolar Transistors - BJT. It is designed for 40V 350mW 100@10mA,1V 200mA PNP SOT-23 Bipolar Transistors - BJT ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Collector-Emitter Breakdown Voltage (Vceo): 40V
  • Power Dissipation (Pd): 350mW
  • DC Current Gain (hFE@Ic,Vce): 100@10mA,1V
  • Collector Current (Ic): 200mA
  • Transition Frequency (fT): 250MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@50mA,5mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.033 grams.

More on 2N3906S-RTK/P

Full Specifications of 2N3906S-RTK/P

Model Number2N3906S-RTK/P
Model NameKEC Semicon 2N3906S-RTK/P
CategoryBipolar Transistors - BJT
BrandKEC Semicon
Description40V 350mW 100@10mA,1V 200mA PNP SOT-23 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.033 grams / 0.001164 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)-
Collector-Emitter Breakdown Voltage (Vceo)40V
Power Dissipation (Pd)350mW
DC Current Gain (hFE@Ic,Vce)100@10mA,1V
Collector Current (Ic)200mA
Transition Frequency (fT)250MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@50mA,5mA
Transistor TypePNP
Operating Temperature-

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