KEC Semicon 2N5401S-RTK/P is a 2N5401S-RTK/P from KEC Semicon, part of the Bipolar Transistors - BJT. It is designed for 150V 350mW 60@10mA,5V 600mA PNP SOT-23 Bipolar Transistors - BJT ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 50nA
- Collector-Emitter Breakdown Voltage (Vceo): 150V
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE@Ic,Vce): 60@10mA,5V
- Collector Current (Ic): 600mA
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@50mA,5mA
- Transistor Type: PNP
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.032 grams.
More on 2N5401S-RTK/P
Full Specifications of 2N5401S-RTK/P
| Model Number | 2N5401S-RTK/P |
| Model Name | KEC Semicon 2N5401S-RTK/P |
| Category | Bipolar Transistors - BJT |
| Brand | KEC Semicon |
| Description | 150V 350mW 60@10mA,5V 600mA PNP SOT-23 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.032 grams / 0.001129 oz |
| Package / Case | SOT-23 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 50nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 150V |
| Power Dissipation (Pd) | 350mW |
| DC Current Gain (hFE@Ic,Vce) | 60@10mA,5V |
| Collector Current (Ic) | 600mA |
| Transition Frequency (fT) | 100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@50mA,5mA |
| Transistor Type | PNP |
| Operating Temperature | - |
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