2N5551-AT/P by KEC Semicon – Specifications

KEC Semicon 2N5551-AT/P is a 2N5551-AT/P from KEC Semicon, part of the Bipolar Transistors - BJT. It is designed for 160V 625mW 80@10mA,5V 600mA TO-92-3 Bipolar Transistors - BJT ROHS. This product comes in a TO-92-3 package and is sold as Box-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 50nA
  • Collector-Emitter Breakdown Voltage (Vceo): 160V
  • Power Dissipation (Pd): 625mW
  • DC Current Gain (hFE@Ic,Vce): 80@10mA,5V
  • Collector Current (Ic): 600mA
  • Transition Frequency (fT): 100MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,5mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.306 grams.

More on 2N5551-AT/P

Full Specifications of 2N5551-AT/P

Model Number2N5551-AT/P
Model NameKEC Semicon 2N5551-AT/P
CategoryBipolar Transistors - BJT
BrandKEC Semicon
Description160V 625mW 80@10mA,5V 600mA TO-92-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.306 grams / 0.010794 oz
Package / CaseTO-92-3
Package / ArrangeBox-packed
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)50nA
Collector-Emitter Breakdown Voltage (Vceo)160V
Power Dissipation (Pd)625mW
DC Current Gain (hFE@Ic,Vce)80@10mA,5V
Collector Current (Ic)600mA
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)200mV@50mA,5mA
Transistor Type-
Operating Temperature-

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