KEC Semicon 2N5551S-RTK/P is a 2N5551S-RTK/P from KEC Semicon, part of the Bipolar Transistors - BJT. It is designed for 160V 350mW 80@10mA,5V 600mA SOT-23 Bipolar Transistors - BJT ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 50nA
- Collector-Emitter Breakdown Voltage (Vceo): 160V
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE@Ic,Vce): 80@10mA,5V
- Collector Current (Ic): 600mA
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,5mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.031 grams.
More on 2N5551S-RTK/P
Full Specifications of 2N5551S-RTK/P
| Model Number | 2N5551S-RTK/P |
| Model Name | KEC Semicon 2N5551S-RTK/P |
| Category | Bipolar Transistors - BJT |
| Brand | KEC Semicon |
| Description | 160V 350mW 80@10mA,5V 600mA SOT-23 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.031 grams / 0.001093 oz |
| Package / Case | SOT-23 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 50nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 160V |
| Power Dissipation (Pd) | 350mW |
| DC Current Gain (hFE@Ic,Vce) | 80@10mA,5V |
| Collector Current (Ic) | 600mA |
| Transition Frequency (fT) | 100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@50mA,5mA |
| Transistor Type | - |
| Operating Temperature | - |
Compare KEC Semicon - 2N5551S-RTK/P With Other 153 Models
- 2N5551S-RTK/P vs KRC403V-RTK/P
- 2N5551S-RTK/P vs KRC405E-RTK/P
- 2N5551S-RTK/P vs KRC406V-RTK/P
- 2N5551S-RTK/P vs KRC411V-RTK/P
- 2N5551S-RTK/P vs KRC419E-RTK/P
- 2N5551S-RTK/P vs KRC421E-RTK/P
- 2N5551S-RTK/P vs KRC660U-RTK/P
- 2N5551S-RTK/P vs KRX101E-RTK/P
- 2N5551S-RTK/P vs KRX104U-RTK/P
- 2N5551S-RTK/P vs KTA1024-Y-AT/P