KGF40N65KDC by KEC Semicon – Specifications

KEC Semicon KGF40N65KDC is a KGF40N65KDC from KEC Semicon, part of the IGBTs. It is designed for 208W 80A 650V FS(Field Stop) TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Power Dissipation (Pd): 208W
  • Turn?off Delay Time (Td(off)): 110ns
  • Turn?on Delay Time (Td(on)): 60ns
  • Collector Current (Ic): 80A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 6.2V@4mA
  • Total Gate Charge (Qg@Ic,Vge): 90nC@40A,15V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge): 1.75V@40A,15V
  • Diode Reverse Recovery Time (Trr): 97ns
  • Turn?off Switching Loss (Eoff): 0.55mJ
  • Turn?on Switching Loss (Eon): 0.95mJ
  • Input Capacitance (Cies@Vce): 2.3nF@30V
  • Diode Forward Voltage (Vf@If): 1.91V@20A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.16 grams.

Full Specifications of KGF40N65KDC

Model NumberKGF40N65KDC
Model NameKEC Semicon KGF40N65KDC
CategoryIGBTs
BrandKEC Semicon
Description208W 80A 650V FS(Field Stop) TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.160 grams / 0.287836 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)208W
Turn?off Delay Time (Td(off))110ns
Operating Temperature-
Turn?on Delay Time (Td(on))60ns
Collector Current (Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6.2V@4mA
Total Gate Charge (Qg@Ic,Vge)90nC@40A,15V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)1.75V@40A,15V
Diode Reverse Recovery Time (Trr)97ns
Turn?off Switching Loss (Eoff)0.55mJ
Turn?on Switching Loss (Eon)0.95mJ
Input Capacitance (Cies@Vce)2.3nF@30V
Diode Forward Voltage (Vf@If)1.91V@20A

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