KEC Semicon KGF40N65KDC is a KGF40N65KDC from KEC Semicon, part of the IGBTs. It is designed for 208W 80A 650V FS(Field Stop) TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:
- Power Dissipation (Pd): 208W
- Turn?off Delay Time (Td(off)): 110ns
- Turn?on Delay Time (Td(on)): 60ns
- Collector Current (Ic): 80A
- Collector-Emitter Breakdown Voltage (Vces): 650V
- Type: FS(Field Stop)
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 6.2V@4mA
- Total Gate Charge (Qg@Ic,Vge): 90nC@40A,15V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge): 1.75V@40A,15V
- Diode Reverse Recovery Time (Trr): 97ns
- Turn?off Switching Loss (Eoff): 0.55mJ
- Turn?on Switching Loss (Eon): 0.95mJ
- Input Capacitance (Cies@Vce): 2.3nF@30V
- Diode Forward Voltage (Vf@If): 1.91V@20A
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.16 grams.
More on KGF40N65KDC
Full Specifications of KGF40N65KDC
Model Number | KGF40N65KDC |
Model Name | KEC Semicon KGF40N65KDC |
Category | IGBTs |
Brand | KEC Semicon |
Description | 208W 80A 650V FS(Field Stop) TO-247-3 IGBTs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 8.160 grams / 0.287836 oz |
Package / Case | TO-247-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Power Dissipation (Pd) | 208W |
Turn?off Delay Time (Td(off)) | 110ns |
Operating Temperature | - |
Turn?on Delay Time (Td(on)) | 60ns |
Collector Current (Ic) | 80A |
Collector-Emitter Breakdown Voltage (Vces) | 650V |
Type | FS(Field Stop) |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.2V@4mA |
Total Gate Charge (Qg@Ic,Vge) | 90nC@40A,15V |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) | 1.75V@40A,15V |
Diode Reverse Recovery Time (Trr) | 97ns |
Turn?off Switching Loss (Eoff) | 0.55mJ |
Turn?on Switching Loss (Eon) | 0.95mJ |
Input Capacitance (Cies@Vce) | 2.3nF@30V |
Diode Forward Voltage (Vf@If) | 1.91V@20A |