KEC Semicon KTB778-O-U/P is a KTB778-O-U/P from KEC Semicon, part of the Bipolar Transistors - BJT. It is designed for 120V 80W 55@1A,5V 10A TO-3P Bipolar Transistors - BJT ROHS. This product comes in a TO-3P package and is sold as Tube-packed. Key features include:
- Collector Cut-Off Current (Icbo): 10uA
- Collector-Emitter Breakdown Voltage (Vceo): 120V
- Power Dissipation (Pd): 80W
- DC Current Gain (hFE@Ic,Vce): 55@1A,5V
- Collector Current (Ic): 10A
- Transition Frequency (fT): 10MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 2.5V@5A,500mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.233 grams.
More on KTB778-O-U/P
Full Specifications of KTB778-O-U/P
| Model Number | KTB778-O-U/P |
| Model Name | KEC Semicon KTB778-O-U/P |
| Category | Bipolar Transistors - BJT |
| Brand | KEC Semicon |
| Description | 120V 80W 55@1A,5V 10A TO-3P Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 7.233 grams / 0.255137 oz |
| Package / Case | TO-3P |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | - |
| Collector Cut-Off Current (Icbo) | 10uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 120V |
| Power Dissipation (Pd) | 80W |
| DC Current Gain (hFE@Ic,Vce) | 55@1A,5V |
| Collector Current (Ic) | 10A |
| Transition Frequency (fT) | 10MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 2.5V@5A,500mA |
| Transistor Type | - |
| Operating Temperature | - |
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