KTC801U-Y-RTK/P by KEC Semicon – Specifications

KEC Semicon KTC801U-Y-RTK/P is a KTC801U-Y-RTK/P from KEC Semicon, part of the Bipolar Transistors - BJT. It is designed for 50V 200mW 120@2mA,6V 150mA NPN US-6 Bipolar Transistors - BJT ROHS. This product comes in a US-6 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 120@2mA,6V
  • Collector Current (Ic): 150mA
  • Transition Frequency (fT): 80MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 100mV@100mA,10mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.028 grams.

Full Specifications of KTC801U-Y-RTK/P

Model NumberKTC801U-Y-RTK/P
Model NameKEC Semicon KTC801U-Y-RTK/P
CategoryBipolar Transistors - BJT
BrandKEC Semicon
Description50V 200mW 120@2mA,6V 150mA NPN US-6 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.028 grams / 0.000988 oz
Package / CaseUS-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)120@2mA,6V
Collector Current (Ic)150mA
Transition Frequency (fT)80MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)100mV@100mA,10mA
Transistor TypeNPN
Operating Temperature-

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