KTC8050S-D-RTK/P by KEC Semicon – Specifications

KEC Semicon KTC8050S-D-RTK/P is a KTC8050S-D-RTK/P from KEC Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 350mW 100@50mA,1V 800mA NPN SOT-23 Bipolar Transistors - BJT ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 50nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Power Dissipation (Pd): 350mW
  • DC Current Gain (hFE@Ic,Vce): 100@50mA,1V
  • Collector Current (Ic): 800mA
  • Transition Frequency (fT): 120MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,20mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.032 grams.

More on KTC8050S-D-RTK/P

Full Specifications of KTC8050S-D-RTK/P

Model NumberKTC8050S-D-RTK/P
Model NameKEC Semicon KTC8050S-D-RTK/P
CategoryBipolar Transistors - BJT
BrandKEC Semicon
Description30V 350mW 100@50mA,1V 800mA NPN SOT-23 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.032 grams / 0.001129 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)50nA
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)350mW
DC Current Gain (hFE@Ic,Vce)100@50mA,1V
Collector Current (Ic)800mA
Transition Frequency (fT)120MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@500mA,20mA
Transistor TypeNPN
Operating Temperature-

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