KEC Semicon KTD1003-B-RTF/P is a KTD1003-B-RTF/P from KEC Semicon, part of the Bipolar Transistors - BJT. It is designed for 50V 500mW 1200@300mA,5V 1A NPN SOT-89-3 Bipolar Transistors - BJT ROHS. This product comes in a SOT-89-3 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Power Dissipation (Pd): 500mW
- DC Current Gain (hFE@Ic,Vce): 1200@300mA,5V
- Collector Current (Ic): 1A
- Transition Frequency (fT): 250MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 170mV@50mA,5mA
- Transistor Type: NPN
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.125 grams.
More on KTD1003-B-RTF/P
Full Specifications of KTD1003-B-RTF/P
Model Number | KTD1003-B-RTF/P |
Model Name | KEC Semicon KTD1003-B-RTF/P |
Category | Bipolar Transistors - BJT |
Brand | KEC Semicon |
Description | 50V 500mW 1200@300mA,5V 1A NPN SOT-89-3 Bipolar Transistors - BJT ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.125 grams / 0.004409 oz |
Package / Case | SOT-89-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Collector Cut-Off Current (Icbo) | 100nA |
Collector-Emitter Breakdown Voltage (Vceo) | 50V |
Power Dissipation (Pd) | 500mW |
DC Current Gain (hFE@Ic,Vce) | 1200@300mA,5V |
Collector Current (Ic) | 1A |
Transition Frequency (fT) | 250MHz |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 170mV@50mA,5mA |
Transistor Type | NPN |
Operating Temperature | - |
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