KTD1003-B-RTF/P by KEC Semicon – Specifications

KEC Semicon KTD1003-B-RTF/P is a KTD1003-B-RTF/P from KEC Semicon, part of the Bipolar Transistors - BJT. It is designed for 50V 500mW 1200@300mA,5V 1A NPN SOT-89-3 Bipolar Transistors - BJT ROHS. This product comes in a SOT-89-3 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Power Dissipation (Pd): 500mW
  • DC Current Gain (hFE@Ic,Vce): 1200@300mA,5V
  • Collector Current (Ic): 1A
  • Transition Frequency (fT): 250MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 170mV@50mA,5mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.125 grams.

Full Specifications of KTD1003-B-RTF/P

Model NumberKTD1003-B-RTF/P
Model NameKEC Semicon KTD1003-B-RTF/P
CategoryBipolar Transistors - BJT
BrandKEC Semicon
Description50V 500mW 1200@300mA,5V 1A NPN SOT-89-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.125 grams / 0.004409 oz
Package / CaseSOT-89-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)500mW
DC Current Gain (hFE@Ic,Vce)1200@300mA,5V
Collector Current (Ic)1A
Transition Frequency (fT)250MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)170mV@50mA,5mA
Transistor TypeNPN
Operating Temperature-

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