KTD600K-Y-U/PH by KEC Semicon – Specifications

KEC Semicon KTD600K-Y-U/PH is a KTD600K-Y-U/PH from KEC Semicon, part of the Bipolar Transistors - BJT. It is designed for 120V 1.5W 100@50mA,5V 1A NPN TO-126 Bipolar Transistors - BJT ROHS. This product comes in a TO-126 package and is sold as Tube-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 120V
  • Power Dissipation (Pd): 1.5W
  • DC Current Gain (hFE@Ic,Vce): 100@50mA,5V
  • Collector Current (Ic): 1A
  • Transition Frequency (fT): 130MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 150mV@500mA,50mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.47 grams.

Full Specifications of KTD600K-Y-U/PH

Model NumberKTD600K-Y-U/PH
Model NameKEC Semicon KTD600K-Y-U/PH
CategoryBipolar Transistors - BJT
BrandKEC Semicon
Description120V 1.5W 100@50mA,5V 1A NPN TO-126 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.470 grams / 0.051853 oz
Package / CaseTO-126
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)1uA
Collector-Emitter Breakdown Voltage (Vceo)120V
Power Dissipation (Pd)1.5W
DC Current Gain (hFE@Ic,Vce)100@50mA,5V
Collector Current (Ic)1A
Transition Frequency (fT)130MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)150mV@500mA,50mA
Transistor TypeNPN
Operating Temperature-

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