KTD998-O-U/P by KEC Semicon – Specifications

KEC Semicon KTD998-O-U/P is a KTD998-O-U/P from KEC Semicon, part of the Bipolar Transistors - BJT. It is designed for 120V 80W 55@1A,5V 10A NPN TO-3P-3 Bipolar Transistors - BJT ROHS. This product comes in a TO-3P-3 package and is sold as Tube-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 10uA
  • Collector-Emitter Breakdown Voltage (Vceo): 120V
  • Power Dissipation (Pd): 80W
  • DC Current Gain (hFE@Ic,Vce): 55@1A,5V
  • Collector Current (Ic): 10A
  • Transition Frequency (fT): 12MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 2.5V@5A,500mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.167 grams.

More on KTD998-O-U/P

Full Specifications of KTD998-O-U/P

Model NumberKTD998-O-U/P
Model NameKEC Semicon KTD998-O-U/P
CategoryBipolar Transistors - BJT
BrandKEC Semicon
Description120V 80W 55@1A,5V 10A NPN TO-3P-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.167 grams / 0.252809 oz
Package / CaseTO-3P-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)10uA
Collector-Emitter Breakdown Voltage (Vceo)120V
Power Dissipation (Pd)80W
DC Current Gain (hFE@Ic,Vce)55@1A,5V
Collector Current (Ic)10A
Transition Frequency (fT)12MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)2.5V@5A,500mA
Transistor TypeNPN
Operating Temperature-

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