KEC Semicon MPS8550-D-AT/P is a MPS8550-D-AT/P from KEC Semicon, part of the Bipolar Transistors - BJT. It is designed for 25V 625mW 160@100mA,1V 1.5A PNP TO-92-3 Bipolar Transistors - BJT ROHS. This product comes in a TO-92-3 package and is sold as Box-packed. Key features include:
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 25V
- Power Dissipation (Pd): 625mW
- DC Current Gain (hFE@Ic,Vce): 160@100mA,1V
- Collector Current (Ic): 1.5A
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 280mV@800mA,80mA
- Transistor Type: PNP
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.306 grams.
More on MPS8550-D-AT/P
Full Specifications of MPS8550-D-AT/P
| Model Number | MPS8550-D-AT/P |
| Model Name | KEC Semicon MPS8550-D-AT/P |
| Category | Bipolar Transistors - BJT |
| Brand | KEC Semicon |
| Description | 25V 625mW 160@100mA,1V 1.5A PNP TO-92-3 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.306 grams / 0.010794 oz |
| Package / Case | TO-92-3 |
| Package / Arrange | Box-packed |
| Battery | No |
| ECCN | - |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 25V |
| Power Dissipation (Pd) | 625mW |
| DC Current Gain (hFE@Ic,Vce) | 160@100mA,1V |
| Collector Current (Ic) | 1.5A |
| Transition Frequency (fT) | 100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 280mV@800mA,80mA |
| Transistor Type | PNP |
| Operating Temperature | - |
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