MPS8550S-D-RTK/P by KEC Semicon – Specifications

KEC Semicon MPS8550S-D-RTK/P is a MPS8550S-D-RTK/P from KEC Semicon, part of the Bipolar Transistors - BJT. It is designed for 25V 350mW 160@100mA,1V 1.5A PNP SOT-23 Bipolar Transistors - BJT ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 25V
  • Power Dissipation (Pd): 350mW
  • DC Current Gain (hFE@Ic,Vce): 160@100mA,1V
  • Collector Current (Ic): 1.5A
  • Transition Frequency (fT): 100MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 280mV@800mA,80mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.032 grams.

More on MPS8550S-D-RTK/P

Full Specifications of MPS8550S-D-RTK/P

Model NumberMPS8550S-D-RTK/P
Model NameKEC Semicon MPS8550S-D-RTK/P
CategoryBipolar Transistors - BJT
BrandKEC Semicon
Description25V 350mW 160@100mA,1V 1.5A PNP SOT-23 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.032 grams / 0.001129 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)25V
Power Dissipation (Pd)350mW
DC Current Gain (hFE@Ic,Vce)160@100mA,1V
Collector Current (Ic)1.5A
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)280mV@800mA,80mA
Transistor TypePNP
Operating Temperature-

Compare KEC Semicon - MPS8550S-D-RTK/P With Other 39 Models

Related Models - MPS8550S-D-RTK/P Alternative

Scroll to Top