KIOXIA TC58NYG0S3HBAI6 is a TC58NYG0S3HBAI6 from KIOXIA, part of the NAND FLASH. It is designed for 1.7V~1.95V 1Gbit VFBGA-67 NAND FLASH ROHS. This product comes in a VFBGA-67 package and is sold as Tray. Key features include:
- Operating Temperature: -40℃~+85℃
- Interface Type: 并口(Parallel)
- Supply Voltage: 1.7V~1.95V
- Write Cycle Time (tWC): 25ns
- Memory Size: 1Gbit
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.2 grams.
More on TC58NYG0S3HBAI6
Full Specifications of TC58NYG0S3HBAI6
| Model Number | TC58NYG0S3HBAI6 |
| Model Name | KIOXIA TC58NYG0S3HBAI6 |
| Category | NAND FLASH |
| Brand | KIOXIA |
| Description | 1.7V~1.95V 1Gbit VFBGA-67 NAND FLASH ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.200 grams / 0.007055 oz |
| Package / Case | VFBGA-67 |
| Package / Arrange | Tray |
| Battery | No |
| ECCN | 3A991B1A |
| Operating Temperature | -40℃~+85℃ |
| Interface Type | 并口(Parallel) |
| Supply Voltage | 1.7V~1.95V |
| Write Cycle Time (tWC) | 25ns |
| Memory Size | 1Gbit |
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