IXTQ200N10T by Littelfuse/IXYS – Specifications

Littelfuse/IXYS IXTQ200N10T is a IXTQ200N10T from Littelfuse/IXYS, part of the MOSFETs. It is designed for 100V 200A 550W 5.5mΩ@10V,50A 4.5V@250uA 1PCSNChannel TO-3P-3 MOSFETs ROHS. This product comes in a TO-3P-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 200A
  • Power Dissipation (Pd): 550W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.5mΩ@10V,50A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 9.4nF@25V
  • Total Gate Charge (Qg@Vgs): 152nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.083 grams.

More on IXTQ200N10T

Full Specifications of IXTQ200N10T

Model NumberIXTQ200N10T
Model NameLittelfuse/IXYS IXTQ200N10T
CategoryMOSFETs
BrandLittelfuse/IXYS
Description100V 200A 550W 5.5mΩ@10V,50A 4.5V@250uA 1PCSNChannel TO-3P-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.083 grams / 0.249846 oz
Package / CaseTO-3P-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)200A
Power Dissipation (Pd)550W
Drain Source On Resistance (RDS(on)@Vgs,Id)5.5mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)@Id)4.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)9.4nF@25V
Total Gate Charge (Qg@Vgs)152nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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