LBC856BWT1G by LRC – Specifications

LRC LBC856BWT1G is a LBC856BWT1G from LRC, part of the Bipolar Transistors - BJT. It is designed for 65V 150mW 290@2mA,5V 100mA PNP SC-70 Bipolar Transistors - BJT ROHS. This product comes in a SC-70 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 65V
  • Power Dissipation (Pd): 150mW
  • DC Current Gain (hFE@Ic,Vce): 290@2mA,5V
  • Collector Current (Ic): 100mA
  • Transition Frequency (fT): 100MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 650mV@100mA,5mA
  • Transistor Type: PNP
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.013 grams.

Full Specifications of LBC856BWT1G

Model NumberLBC856BWT1G
Model NameLRC LBC856BWT1G
CategoryBipolar Transistors - BJT
BrandLRC
Description65V 150mW 290@2mA,5V 100mA PNP SC-70 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.013 grams / 0.000459 oz
Package / CaseSC-70
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)15nA
Collector-Emitter Breakdown Voltage (Vceo)65V
Power Dissipation (Pd)150mW
DC Current Gain (hFE@Ic,Vce)290@2mA,5V
Collector Current (Ic)100mA
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)650mV@100mA,5mA
Transistor TypePNP
Operating Temperature-55℃~+150℃@(Tj)

Compare LRC - LBC856BWT1G With Other 17 Models

Related Models - LBC856BWT1G Alternative

Scroll to Top