LMBTA55LT1G by LRC – Specifications

LRC LMBTA55LT1G is a LMBTA55LT1G from LRC, part of the Bipolar Transistors - BJT. It is designed for 60V 300mW 100@100mA,1V 500mA PNP SOT-23 Bipolar Transistors - BJT ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 60V
  • Power Dissipation (Pd): 300mW
  • DC Current Gain (hFE@Ic,Vce): 100@100mA,1V
  • Collector Current (Ic): 500mA
  • Transition Frequency (fT): 50MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@100mA,10mA
  • Transistor Type: PNP
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.031 grams.

Full Specifications of LMBTA55LT1G

Model NumberLMBTA55LT1G
Model NameLRC LMBTA55LT1G
CategoryBipolar Transistors - BJT
BrandLRC
Description60V 300mW 100@100mA,1V 500mA PNP SOT-23 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.031 grams / 0.001093 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)60V
Power Dissipation (Pd)300mW
DC Current Gain (hFE@Ic,Vce)100@100mA,1V
Collector Current (Ic)500mA
Transition Frequency (fT)50MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)250mV@100mA,10mA
Transistor TypePNP
Operating Temperature-55℃~+150℃@(Tj)

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