LMBTH10LT1G by LRC – Specifications

LRC LMBTH10LT1G is a LMBTH10LT1G from LRC, part of the Bipolar Transistors - BJT. It is designed for 25V 300mW 60@4mA,10V 50mA NPN SOT-23 Bipolar Transistors - BJT ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100uA
  • Collector-Emitter Breakdown Voltage (Vceo): 25V
  • Power Dissipation (Pd): 300mW
  • DC Current Gain (hFE@Ic,Vce): 60@4mA,10V
  • Collector Current (Ic): 50mA
  • Transition Frequency (fT): 650MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@4mA,400uA
  • Transistor Type: NPN
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.031 grams.

Full Specifications of LMBTH10LT1G

Model NumberLMBTH10LT1G
Model NameLRC LMBTH10LT1G
CategoryBipolar Transistors - BJT
BrandLRC
Description25V 300mW 60@4mA,10V 50mA NPN SOT-23 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.031 grams / 0.001093 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)100uA
Collector-Emitter Breakdown Voltage (Vceo)25V
Power Dissipation (Pd)300mW
DC Current Gain (hFE@Ic,Vce)60@4mA,10V
Collector Current (Ic)50mA
Transition Frequency (fT)650MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@4mA,400uA
Transistor TypeNPN
Operating Temperature-55℃~+150℃@(Tj)

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