MASPOWER MS10N100FB is a MS10N100FB from MASPOWER, part of the MOSFETs. It is designed for 1kV 10A 186.5W 5V@250μA 1PCSNChannel TO-3PB MOSFETs ROHS. This product comes in a TO-3PB package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 1kV
- Continuous Drain Current (Id): 10A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.37Ω@10V,4.5A;3.37Ω@10V,4.5A
- Power Dissipation (Pd): 186.5W
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250μA
- Reverse Transfer Capacitance (Crss@Vds): 13pF
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.15nF
- Total Gate Charge (Qg@Vgs): 43nC
- Operating Temperature: -55℃~+150℃
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.1 grams.
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Full Specifications of MS10N100FB
Model Number | MS10N100FB |
Model Name | MASPOWER MS10N100FB |
Category | MOSFETs |
Brand | MASPOWER |
Description | 1kV 10A 186.5W 5V@250μA 1PCSNChannel TO-3PB MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 7.100 grams / 0.250445 oz |
Package / Case | TO-3PB |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 1kV |
Continuous Drain Current (Id) | 10A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.37Ω@10V,4.5A;3.37Ω@10V,4.5A |
Power Dissipation (Pd) | 186.5W |
Gate Threshold Voltage (Vgs(th)@Id) | 5V@250μA |
Reverse Transfer Capacitance (Crss@Vds) | 13pF |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.15nF |
Total Gate Charge (Qg@Vgs) | 43nC |
Operating Temperature | -55℃~+150℃ |