MASPOWER MS4N1350E is a MS4N1350E from MASPOWER, part of the MOSFETs. It is designed for 1.5kV 4A 80W 5.8Ω@10V,1.3A 6V@250μA 1PCSNChannel TO-263-2 MOSFETs ROHS. This product comes in a TO-263-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 1.5kV
- Continuous Drain Current (Id): 4A
- Power Dissipation (Pd): 80W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5.8Ω@10V,1.3A
- Gate Threshold Voltage (Vgs(th)@Id): 6V@250μA
- Reverse Transfer Capacitance (Crss@Vds): 19.8pF
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.408nF
- Total Gate Charge (Qg@Vgs): 44nC
- Operating Temperature: -50℃~+150℃
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.97 grams.
More on MS4N1350E
Full Specifications of MS4N1350E
Model Number | MS4N1350E |
Model Name | MASPOWER MS4N1350E |
Category | MOSFETs |
Brand | MASPOWER |
Description | 1.5kV 4A 80W 5.8Ω@10V,1.3A 6V@250μA 1PCSNChannel TO-263-2 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.970 grams / 0.06949 oz |
Package / Case | TO-263-2 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 1.5kV |
Continuous Drain Current (Id) | 4A |
Power Dissipation (Pd) | 80W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 5.8Ω@10V,1.3A |
Gate Threshold Voltage (Vgs(th)@Id) | 6V@250μA |
Reverse Transfer Capacitance (Crss@Vds) | 19.8pF |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.408nF |
Total Gate Charge (Qg@Vgs) | 44nC |
Operating Temperature | -50℃~+150℃ |