Microchip Tech 1N5806US is a 1N5806US from Microchip Tech, part of the Fast recovery/high efficiency diode. It is designed for 875mV@1A 25ns 1A 150V MELF Fast recovery/high efficiency diode ROHS. This product comes in a MELF package and is sold as Bag-packed. Key features include:
- Forward Voltage (Vf@If): 875mV@1A
- Reverse Leakage Current: 1uA@150V
- Reverse Recovery Time (trr): 25ns
- Average Rectified Current (Io): 1A
- Operating Temperature: -65℃~+175℃
- Reverse Voltage (Vr): 150V
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.15 grams.
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Full Specifications of 1N5806US
| Model Number | 1N5806US |
| Model Name | Microchip Tech 1N5806US |
| Category | Fast recovery/high efficiency diode |
| Brand | Microchip Tech |
| Description | 875mV@1A 25ns 1A 150V MELF Fast recovery/high efficiency diode ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.150 grams / 0.005291 oz |
| Package / Case | MELF |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Forward Voltage (Vf@If) | 875mV@1A |
| Reverse Leakage Current | 1uA@150V |
| Reverse Recovery Time (trr) | 25ns |
| Average Rectified Current (Io) | 1A |
| Operating Temperature | -65℃~+175℃ |
| Reverse Voltage (Vr) | 150V |